1 TGA8659-FL may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com key features ? frequency range: 13 - 15 ghz ? >25 db nominal gain ? >36 dbm nominal psat ? bias 6 - 7.5v @ 1.3 - 1.6a idq ? package dimensions: 0.33 x 0.70 x 0.12 in 8.4 x 17.8 x 3.0 mm primary applications ? ku-band vsat transmit ? point-to-point radio fixtured measured performance the triquint tga8569-fl is a packaged power amplifier delivering more than 4 watts in the vsat band. the power amplifier works over the extended frequency range of 13 to 17 ghz and is designed using triquint?s proven standard 0.5 um gate phemt production process. the TGA8659-FL provides a nominal gain greater than 25db with excellent input and output vswr. the TGA8659-FL is designed for ku- band vsat transmitters and can also provide high power over a wider frequency band. evaluation boards are available upon request. lead-free and rohs compliant 13 ? 15 ghz 4w power amplifier datasheet subject to change without notice
2 TGA8659-FL may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com table i maximum ratings 1 / symbol parameter value notes v + positive supply voltage 8v i + positive supply current (quiescent) 1.7 a 2 / p d power dissipation 13.6 w p in input continuous wave power 24 dbm t ch operating channel temperature 200 c 3 /, 4 / mounting temperature (30 seconds) 260 c t stg storage temperature -65 c to 150 c 1 / these values represent the maximum operable values of this device 2 / total current for the entire mmic 3 / these ratings apply to each individual fet 4 / junction operating temperature will directly affect the device mean time to failure (tm). for maximum life it is recommended that junction temperatures be maintained at the lowest p ossible levels.
3 TGA8659-FL may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com table ii electrical characteristics (ta = 25 o c 5 o c) parameter units typical drain operating voltage v 7 quiescent current a 1.3 small signal gain db 25 gain flatness (freq = 13.5 - 15 ghz) db/100mh z 0.1 input return loss (linear small signal) db 10 output return loss (linear small signal) db 10 reverse isolation db > 50 cw output power @psat at 14.5ghz dbm 36 toi at 14.5 ghz with pout/tone of 28 dbm dbm 41 power added efficiency@psat % 30 p1db temperature coeff. tc (-40 to +70 c) db/deg c -0.01
4 TGA8659-FL may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com table iii thermal information parameter test conditions t ch ( c) jc ( c/w) tm (hrs) jc thermal resistance (channel to case) vd = 7 v id = 1.3 a pdiss = 9.1 w 123 5.8 1.2e+7 note: assumes eutectic attach using 1.5 mil 80/20 ausn mounted to a 20 mil cumo carrier at 70 c baseplate temperature. worst case condition with no rf applied, 100% of dc power is dissipated. median lifetime (tm) vs. channel temperature
5 TGA8659-FL may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com measured fixtured data
6 TGA8659-FL may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com measured fixtured data
7 TGA8659-FL may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com measured fixtured data 30 33 36 39 42 45 48 10 13 16 19 22 25 28 31 34 fundamental output power per tone (dbm) toi (dbm) bias conditions: vd = 6v, idq = 1.3a 5% @14.5 ghz
8 TGA8659-FL may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com mechanical drawing gaas mmic devices are susceptible to damage from electrostatic discharge . proper precautions should be observed during handling, assembly and test. 10 9 8 7 6 5 4 3 2 1 .000 .280 .330 .165 .050 .000 .050 .185 .515 .650 .700 .615 .085 ?.090 x 2 10x .005.002 .042 .025 .078 .350 .500 .450 .250 .200 .430 .315 10 x 0.010" x 0.100" 0.010" lead width and length
9 TGA8659-FL may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com bias procedure 1) make sure no rf power is applied to the device before continuing. 2) pinch off device by setting v g to ?1.5v. 3) raise v d to 7.0v while monitoring drain current. 4) raise v g until drain current reaches 1.3 a. v g should be between ?0.6v and ?0.3v. 5) apply rf power. gaas mmic devices are susceptible to damage from electrostatic discharge . proper precautions should be observed during handling, assembly and test. ordering information part package style TGA8659-FL flange, leads bolted down note: pins 6 and 10 are connected together internally
10 TGA8659-FL may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com 1,2,4,7,9 rf in TGA8659-FL 3 10 8 rf out vd 0.01 f 1 f 1 f 0.01 f 6 vd (optional) 10 5 vg 0.01 f 1 f 10-30 f tantalum (external) evaluation board and schematic
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